? 2007 ixys all rights reserved 1 - 5 vvzb 135 20070912a ixys reserves the right to change limits, test conditions and dimensions. symbol conditions maximum ratings v rrm 1600 v i davm t c = 85c; sinusoidal 120 135 a i fsm t vj = 45c; t = 10 ms; v r = 0 v 700 a t vj = 150c; t = 10 ms; v r = 0 v 610 a i 2 t t vj = 45c; t = 10 ms; v r = 0 v 2450 a 2 s t vj = 150c; t = 10 ms; v r = 0 v 1860 a 2 s p tot t c = 25c per diode 190 w (di/dt) cr t vj = t vjm ; repetitive; i t = 150 a 100 a/s f = 50 hz; t p = 200 s v d = 2 / 3 v drm ; i g = 0.45 a; non repetitive; i t = i d(av) /3 500 a/s di g /dt = 0.45 a/s (dv/dt) cr t vj = t vjm ; v dr = 2 / 3 v drm ; 1000 v/s r gk = ; method 1 (linear voltage rise) p gm t vj = t vjm ;t p = 30s 10 w i t = i d(av) /3; t p = 300 s 5 w p gavm 0.5 w v ces t vj = 25c to 150c 1200 v v ge continuous 20 v i c25 t c = 25c; dc 95 a i c80 t c = 80c; dc 67 a i cm t p = pulse width limited by t vjm 100 a p tot t c = 25c 380 w v rrm 1200 v i fav t c = 80c; rectangular d = 0.5 27 a i frms t c = 80c; rectangular d = 0.5 38 a i frm t c = 80c; t p = 10 s; f = 5 khz tbd a i fsm t vj = 45c; t = 10 ms 200 a p tot t c = 25c 130 w v rrm type v 1600 vvzb 135-16 no1 igbt fast recovery diode rectifier bridge features ? soldering connections for pcb mounting ? convenient package outline ? thermistor ? isolation voltage 2500 v~ applications ? drive inverters with brake system advantages ? 2 functions in one package ? easy to mount with two screws ? suitable for wave soldering ? high temperature and power cycling capability data according to iec 60747 v rrm = 1600 v i davm = 135 a three phase rectifier bridge with igbt and fast recovery diode for braking system 6+7 4+5 2+3 19 + 20 1213 10 + 11 1 21+22 18 8+9 ntc 16 15 14 17 see outline drawing for pin arrangement e72873 recommended replacement: vvzb 135-16ioxt p h a s e - o u t
? 2007 ixys all rights reserved 2 - 5 vvzb 135 20070912a ixys reserves the right to change limits, test conditions and dimensions. i r , i d v r = v rrm ;t vj = 25c 0.1 ma v r = v rrm ;t vj = 150c 20 ma v f , v t i f = 80 a; t vj = 25c 1.43 v v t0 for power-loss calculations only 0.85 v r t t vj = 150c 7.1 m v gt v d = 6 v; t vj = 25c 1.5 v t vj = -40c 1.6 v i gt v d = 6 v; t vj = 25c 78 ma t vj = -40c 200 ma v gd t vj = t vjm ;v d = 2 / 3 v drm 0.2 v i gd t vj = t vjm ;v d = 2 / 3 v drm 5ma i l v d = 6 v; t g = 10 s; 450 ma di g /dt = 0.45 a/s; i g = 0.45 a i h t vj = t vjm ; v d = 6 v; r gk = 100 ma t gd v d = ? v drm ;2 s di g /dt = 0.45 a/s; i g = 0.45 a t q t vj = t vjm ; v r = 100 v; 150 s v d = 2 / 3 v drm ; t p = 200 s; dv/dt = 15 v/s; i t = 20 a; -di/dt = 10 a/s r thjc per diode 0.65 k/w r thch 0.2 k/w v br(ces) v gs = 0 v; i c = 0.1 ma 1200 v v ge(th) i c = 8 ma 4.5 6.45 v i ces v ce = 1200 v; t vj = 25c 0.1 ma v ce = 0,8 ? v ces ;t vj = 125c 0.5 ma v cesat v ge = 15 v; i c = 100 a 3.5 v t sc (scsoa) v ge = 15 v; v ce = 900 v; t vj = 125c 10 s rbsoa v ge = 15 v; v ce = 1200 v; t vj = 125c; 100 a clamped inductive load; l = 100 h; r g = 22 c ies v ce = 25 v; f = 1 mhz, v ge = 0 v 3.8 nf t d(on) 150 ns t d(off) 680 ns e on 6mj e off 5mj r thjc 0.33 k/w r thch 0.1 k/w symbol conditions characteristic values (t vj = 25c, unless otherwise specified) min. typ. max. rectifier diodes v ce = 720 v; i c = 50 a v ge = 15 v; r g = 22 inductive load; l = 100 h; t vj = 125c igbt rectifier bridge p h a s e - o u t
? 2007 ixys all rights reserved 3 - 5 vvzb 135 20070912a ixys reserves the right to change limits, test conditions and dimensions. symbol conditions characteristic values (t vj = 25c, unless otherwise specified) min. typ. max. i r v r = v rrm ; t vj = 25c 0.25 ma v r = 1200 v; t vj = 125c 1 ma v f i f = 30 a; t vj = 25c 2.76 v v t0 for power-loss calculations only 1.3 v r t t vj = 150c 16 m i rm i f = 50 a; -di f /dt = 100 a/s; v r = 100 v 5.5 11 a t rr i f = 1 a; -di f /dt = 200 a/s; v r = 30 v 40 ns r thjc 0.9 k/w r thch 0.25 k/w r 25 4.75 5.0 5.25 k b 25/50 3375 k symbol conditions maximum ratings t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz; t = 1 min 2500 v~ i isol 1 ma; t = 1 s 3000 v~ m d mounting torque 2.7...3.3 nm d s creep distance on surface 12.7 mm d a strike distance in air 9.6 mm a maximum allowable acceleration 50 m/s 2 weight typ. 180 g fast recovery diode ntc module dimensions in mm (1 mm = 0.0394") r(t) = r 25 ? e b 25/100 11 t 298k ( ) 1 10 100 1000 0.1 1 10 i g v g ma 1: i gt , t vj = 125c 2: i gt , t vj = 25c 3: i gt , t vj = -40c v 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w i gd , t vj = 125c 3 4 2 1 5 6 10 100 1000 1 10 100 1000 s t gd i g ma t vj = 25c typ. limit fig. 2 gate trigger delay time fig. 1 gate trigger characteristics p h a s e - o u t
? 2007 ixys all rights reserved 4 - 5 vvzb 135 20070912a ixys reserves the right to change limits, test conditions and dimensions. 0 25 50 75 100 125 150 0 30 60 90 120 150 0 255075100125150 11 0 100 1000 10000 0.001 0.01 0.1 1 0 100 200 300 400 500 600 s i 2 t a 2 s i tavm a 0.001 0.01 0.1 1 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ms t a i tsm k/w z thjc s t t c t 0.00.51.01.52.0 0 25 50 75 100 125 150 v a i t v t 0 306090120 0 50 100 150 200 250 t a a i rms p tot w vvzb 135 t vj =125c t vj = 25c t vj = 45c t vj =150c 80 % v rrm 50 hz r thka k/w = 5 3 2 1.5 1 0.5 0.2 v r = 0 v t vj =45c t vj =150c fig. 4 surge overload current fig. 6 power dissipation versus direct output current and ambient temperature fig. 5 i2t versus time (per thyristor/diode) fig. 8 transient thermal impedance junction to case (per thyristor/diode) fig. 7 maximum forward current at case temperature fig. 3 forward current versus voltage drop per leg constants for z thjc calculation: r thi / (k/w) t i / (s) 0.03 0.0005 0.083 0.008 0.361 0.094 0.176 0.45 p h a s e - o u t
? 2007 ixys all rights reserved 5 - 5 vvzb 135 20070912a ixys reserves the right to change limits, test conditions and dimensions. 0.00.51.01.52.02.53.03.54.0 0 30 60 90 120 150 v ge = 15v v v ce a i c t vj = 25c t vj = 125c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 30 60 90 v v f i f t vj = 25c t vj = 125c a 0 20406080100120 0 3 6 9 0 300 600 900 e off t d(off) t f i c a e off t mj ns 0 102030405060 0 2 4 6 8 10 0 200 400 600 800 1000 e off t d(off) t f e off t ns mj 0.00001 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 t s k/w z thjc diode 0 25 50 75 100 125 150 100 1000 10000 t c r r g v ce = 720 v v ge = 15 v r g = 22 t vj = 125c v ce = 720 v v ge = 15 v i c = 50 a t vj = 125c igbt single pulse vvzb 135 fig. 9 typ. output characteristics fig. 10 typ. forward characteristics of free wheeling diode fig. 11 typ. turn off energy and switching fig. 12 typ. turn off energy and switching times versus collector current times versus gate resistor fig. 13 typ. transient thermal impedance fig. 14 typ. thermistor resistance versus temperature p h a s e - o u t
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